3D simulation of coaxial carbon nanotube field effect transistor

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

DNA-templated carbon nanotube field-effect transistor.

The combination of their electronic properties and dimensions makes carbon nanotubes ideal building blocks for molecular electronics. However, the advancement of carbon nanotube-based electronics requires assembly strategies that allow their precise localization and interconnection. Using a scheme based on recognition between molecular building blocks, we report the realization of a self-assemb...

متن کامل

Performance evaluation of Carbon nanotube junctionless tunneling field effect transistor (CNT-JLTFET) under torsional strain: A quantum simulation study

In this paper, the performance of a CNT-JLTFET under different values of torsional strains of 0, 3, and 5 degrees has been investigated. Simulation has been carried out using non-equilibrium Green’s function (NEGF) formalism in the mode-space approach and in the ballistic limit. The simulation results indicate that, under torsional strain, an increase occurs in the energy band-gap, and thus the...

متن کامل

Compact modeling of Optically-Gated Carbon NanoTube Field Effect Transistor

Background Carbon Nanotube Field Effect Transistors (CNTFETs) have high charge sensitivity at room temperature [1]. By using this sensitivity, some nonvolatile memory devices have been demonstrated with charge trapping in SiO 2 gate insulator [2, 3]. Besides, a new design of synapse-like circuit requires a multi-level nonvolatile memory [4]. For this application, and according to its high charg...

متن کامل

Gate structural engineering of MOS-like junctionless Carbon nanotube field effect transistor (MOS-like J-CNTFET)

In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...

متن کامل

Single-walled Carbon Nanotube (CNT) Field Effect Transistor Device Modeling

We have developed a surface potential based compact model for the single-walled semiconductor CNT field effect transistor (CNT-FET) shown in Figure 1. Our compact modeling results for surface potential, channel charge, gate capacitance and channel current are shown in Figures 2-5 respectively. The model comparison is done using the numerical results of [1-4]. The compact model is developed for ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Journal of Physics: Conference Series

سال: 2009

ISSN: 1742-6596

DOI: 10.1088/1742-6596/187/1/012061